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| www..com Pb Free Plating Product ISSUED DATE :2006/08/14 REVISED DATE : G3400 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 28m 5.8A The G3400 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The G3400 is universally used for all commercial-industrial applications. Description * Lower Gate Charge *Small Package Outline *RoHS Compliant Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a Ratings 30 12 5.8 4.9 30 1.38 0.01 -55 ~ +150 Value 90 Unit V V A A A W W/ : : Unit : /W Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. G3400 Page: 1/4 ISSUED DATE :2006/08/14 REVISED DATE : Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=55 : ) Symbol BVDSS VGS(th) gfs IGSS IDSS Min. 30 0.7 - Typ. 15 9.7 1.6 3.1 3.3 4.8 26.3 4.1 823 99 77 1.2 Max. 1.4 100 1 5 28 33 52 12 1030 3.6 Unit V V S nA uA uA Test Conditions VGS=0, ID=250uA VDS=VGS, ID=250uA VDS=5V, ID=5A VGS= 12V VDS=24V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=5.8A Static Drain-Source On-Resistance RDS(ON) - m VGS=4.5V, ID=5.0A VGS=2.5V, ID=4.0A ID=5.8A VDS=15V VGS=4.5V VDS=15V VGS=10V RG=3 RL=2.7 VGS=0V VDS=15V f=1.0MHz f=1.0MHz Total Gate Charge 2 Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Symbol VSD 2 - Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance nC ns pF Source-Drain Diode Parameter Forward On Voltage 2 Min. - Typ. 16 8.9 - Max. 1.0 2.5 Unit V ns nC A Test Conditions IS=1.0A, VGS=0V IS=5A, VGS=0V dI/dt=100A/ s VD=VG=0V, VS=1.0V Reverse Recovery Time Trr Qrr IS Reverse Recovery Charge Continuous Source Current (Body Diode) Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 : /W when mounted on Min. copper pad. G3400 Page: 2/4 ISSUED DATE :2006/08/14 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage 10 1 0.1 0.01 0.001 0.0001 0.00001 0.000001 Fig 4. On-Resistance v.s. Junction Temperature Fig 5. On-Resistance v.s. Gate-Source Voltage Fig 6. Body Diode Characteristics G3400 Page: 3/4 ISSUED DATE :2006/08/14 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 8. Single Pulse Power Rating Junction-to-Ambient v.s. Junction Temperature Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Normalized Maximum Transient Thermal Impedance Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 G3400 Page: 4/4 |
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